RF Microwave Power Amplifiers are electronic devices used to amplify microwave signals ranging from 300 MHz to 300 GHz, and can be categorized into solid-state amplifiers (including GaAs FETs, HEMTs, HBT transistors, and MMIC/HMIC integrated circuits) and vacuum tube amplifiers (such as traveling wave tubes and klystrons). Their primary applications include satellite communications, 5G/6G base stations, radar systems, electronic warfare, and radio astronomy .
Solid-state devices employ processes such as indium phosphide high electron mobility transistors, enabling the noise figure of low-noise amplifiers (LNAs) to be as low as 0.5 dB. Power amplifiers (PAs) achieve kilowatt-level output power, with gallium nitride (GaN) materials widely utilized due to their high power density [6]. Vacuum tube-type devices convert energy through the interaction of electron beams and electromagnetic fields, while traveling wave tubes can deliver megawatt-level pulsed power. Key parameters include gain, output power, noise figure, 1-dB gain compression point, and power-added efficiency.
2~18GHz 10W Small Package Broadband Power Amplifier
Featured
Ultra broadband 2~18GHz
Low Insertion Loss
Small Package
High Reliability
Extensive environmental adaptability
Specifications
Frequency Range: 2~18GHz
Gain: 40dB Min
Flatness: ±2dB
Psat: 40dBm Min
Power Supply: +28V
Current: 1.8A
Connector: SMA-Female (50Ω)
